发明名称 OVER DRIVING PULSE GENERATOR AND MEMORY DEVICE WHICH INCLUDE PULSE GENERATOR
摘要 An over driving pulse generator and a memory device including the same are provided to control the width of a pulse according to the variation of a power supply voltage. A bit line sense amplifier(310) amplifies a voltage difference between a pair of bit lines. A sense amplifier driving part(320) supplies a driving voltage to the bit line sense amplifier in order to enable the bit line sense amplifier. An over driving control part(330) adjusts the size of a high voltage supply period for over driving supplied by the sense amplifier part according to the variation of a power supply voltage. The over driving control part comprises an over driving pulse generation unit to generate a pulse signal with pulse width adjusted according to the level variation of the power supply voltage.
申请公布号 KR20080001037(A) 申请公布日期 2008.01.03
申请号 KR20060059068 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SANG HEE
分类号 G11C11/4091;G11C7/06;G11C7/08 主分类号 G11C11/4091
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