发明名称 |
OVER DRIVING PULSE GENERATOR AND MEMORY DEVICE WHICH INCLUDE PULSE GENERATOR |
摘要 |
An over driving pulse generator and a memory device including the same are provided to control the width of a pulse according to the variation of a power supply voltage. A bit line sense amplifier(310) amplifies a voltage difference between a pair of bit lines. A sense amplifier driving part(320) supplies a driving voltage to the bit line sense amplifier in order to enable the bit line sense amplifier. An over driving control part(330) adjusts the size of a high voltage supply period for over driving supplied by the sense amplifier part according to the variation of a power supply voltage. The over driving control part comprises an over driving pulse generation unit to generate a pulse signal with pulse width adjusted according to the level variation of the power supply voltage.
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申请公布号 |
KR20080001037(A) |
申请公布日期 |
2008.01.03 |
申请号 |
KR20060059068 |
申请日期 |
2006.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, SANG HEE |
分类号 |
G11C11/4091;G11C7/06;G11C7/08 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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