发明名称 |
MRAM Memory Cell Having a Weak Intrinsic Anisotropic Storage Layer and Method of Producing the Same |
摘要 |
An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
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申请公布号 |
US2008002462(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070769454 |
申请日期 |
2007.06.27 |
申请人 |
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发明人 |
RUEHRIG MANFRED;WECKER JOACHIM;KLOSTERMANN ULRICH |
分类号 |
G11C13/06 |
主分类号 |
G11C13/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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