发明名称 |
Integrated Circuit Devices Having Uniform Silicide Junctions |
摘要 |
Integrated circuit devices are provided including an integrated circuit substrate and a gate on the integrated circuit substrate. The gate has sidewalls. A barrier layer spacer is provided on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is provided on the portion of the barrier layer spacer protruding from the sidewalls of the gate.
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申请公布号 |
US2008001235(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070853361 |
申请日期 |
2007.09.11 |
申请人 |
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发明人 |
JANG SE-MYEONG;JIN GYO-YOUNG;OH YONG-CHUL;KIM HYUN-CHANG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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