| 摘要 |
A method of reducing or eliminating electrical shorts in a metal layer when producing laser patterned metal disposed on an intermediate layer that is disposed on a substrate, such as for example, a silicon wafer, includes forming the intermediate layer from a material wherein the difference between the coefficient of thermal expansion of the intermediate layer and the coefficient of thermal expansion of the metal is less than the difference between the coefficient of thermal expansion of silicon dioxide and the coefficient of thermal expansion of aluminum. In one embodiment, a layer of alumina is deposited on a silicon wafer, a layer of aluminum is deposited on the alumina, and at least portions of the aluminum are removed by laser etching to produce one or more electrically separated structures from the aluminum layer.
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