| 摘要 |
An n-type drift region includes an active element region and a peripheral region. A p-type base region is formed at least in the active element region. A trench-type gate electrode is formed in each of the active element region and the peripheral region. An n-type source region formed in the base region. A plurality of p-type column regions is selectively formed separately from one another in each of the active element region and the peripheral region. In a peripheral region, a p-type guard region is formed below the gate electrode. In the active element region, the p-type guard region is not formed below the gate electrode. As a result, it is possible to hold the breakdown voltage in the peripheral region at a higher level than in the active element region while maintaining the low ON resistance due to a superjunction structure and to raise the breakdown voltage performance of the semiconductor device.
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