发明名称 FABRICATION OF THREE DIMENSIONAL INTEGRATED CIRCUIT EMPLOYING MULTIPLE DIE PANELS
摘要 A method of assembling an electronic device includes testing (602) a first wafer (100) of first die to identify the location of functional first die and dividing (604) the first wafer (100) into a set of panels (104-1, 104-2, 104-3), wherein a panel includes an MxN array of first die. A panel is bonded to a panel site of a second wafer to form a panel stack wherein a panel site defines an MxN array of second die in the second wafer. The panel stack is sawed (606) into a devices comprising a first die bonded to a second die. Dividing the first (100) wafer into panels may be done according statically or dynamically (to maximize the number of panels having a yield exceeding a specified threshold). Binning of the panels and panel sites according to functional die patterns may be performed to preferentially bond panels to panel sites of the same bin.
申请公布号 WO2007018850(A3) 申请公布日期 2008.01.03
申请号 WO2006US26256 申请日期 2006.07.03
申请人 FREESCALE SEMICONDUCTOR;JONES, ROBERT E.;POZDER, SCOTT K. 发明人 JONES, ROBERT E.;POZDER, SCOTT K.
分类号 H01L21/30;H01L21/46 主分类号 H01L21/30
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