MASK FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD OF FORMING PATTERN USING THE MASK

摘要

A mask for a semiconductor device is provided to form a desired pattern in a precise position of a semiconductor device by fabricating a phase shift mask in which a step between a memory device and a non-memory device is compensated. A mask substrate(22) is divided into a memory device region and a non-memory device region that have different thickness to form a step between the respective regions. A plurality of mask patterns(23) are formed at regular intervals on the mask substrate. Phase shift patterns(24) are alternately formed between the mask patterns. The memory device region can be a region corresponding to a memory device, and the non-memory device region can be a region corresponding to a non-memory device. The step can be a step between the memory device and the non-memory device.