METHOD FOR FABRICATING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

A method for forming a capacitor of a semiconductor device is provided to improve the thermal stability of a capacitor and a refresh characteristic of a device by removing the stress of a capacitor not to increase the thermal burden of a posterior process of deposition of a dielectric layer including a high dielectric constant material prior to the deposition of the dielectric layer. A storage node electrode(120) is formed on an interlayer dielectric(102) of a semiconductor substrate(100) with a contact plug(104). An RTA(Rapid Thermal Annealing) is performed on the storage node electrode. Impurities generated on the storage node electrode are eliminated, and a heat treatment process is performed at a temperature of 600-700 degrees centigrade in a plasma atmosphere to reduce the stress of the RTA. A dielectric layer including a high dielectric constant material is formed on the storage node electrode. A plate electrode is formed on the dielectric layer. The electrode is formed by using one selected from a group of TiN, WN, TaN, Pt, Ru and amorphous silicon.