| 摘要 |
A method for manufacturing a semiconductor device is provided to decrease a stress in a trench due to a contraction of an SOD(Spin On Dielectric) film by forming a polysilicon film before burying a trench using the SOD film. A tunnel oxide film(102), a first polysilicon film(104) for a floating gate, and a photoresist pattern are sequentially formed on a semiconductor substrate(100). A portion of the first polysilicon film, the tunnel oxide film, and the semiconductor substrate is etched by using the photoresist pattern as a mask to form a trench. A sidewall oxide film(108) is formed in the trench. A second polysilicon film(110) is formed on an overall structure including the trench. An SOD film(112) is formed, such that the trench is buried. The SOD film is formed by using a PSZ(PolySilaZane) material up to a thickness between 1000 and 8000 Å.
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