| 摘要 |
A method of manufacturing a semiconductor device includes the steps of forming a gate for a high voltage transistor on a semiconductor substrate, forming a Double Doped Drain (DDD) junction in the semiconductor substrate by means of an ion implantation process employing a DDD mask, and removing point defects, which have occurred in the DDD junction during the ion implantation process, by means of a Defect Recovery Anneal (DRA) process.
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