| 摘要 |
#CMT# #/CMT# The device (100) has a sample (7) attached to an XYZ-stage (1), and a control unit (20) positioning a height of the XYZ-stage in such a manner that a complete distance measured by a distance measuring unit (50) is equal to a fixed firm distance. A control voltage is applied to a secondary electron control electrode of a collection unit. The voltage is defined in such a manner that a potential of a sample surface takes a constant level, when a sample (7) is positioned in a fixed distance, where an electron beam is radiated by a creation of a fixed accelerating voltage. #CMT# : #/CMT# An independent claim is also included for a method for magnitude measurement of an electron beam. #CMT#USE : #/CMT# Electron beam magnitude measuring device i.e. electron microscope, for testing a sample i.e. calibration sample, and for measuring a sample line width, during manufacturing process of a semiconductor device. #CMT#ADVANTAGE : #/CMT# The control voltage is defined in such a manner that the potential of the sample surface takes the constant level, when the sample is positioned in the fixed distance, where the electron beam is radiated by the creation of the fixed accelerating voltage, thus measuring the sample with high accuracy, while keeping the potential of the sample surface within a range of not more than 1 volt. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a configuration diagram of an electron beam magnitude measuring device. '(Drawing includes non-English language text)' 1 : XYZ-stage 7 : Sample 20 : Control unit 30 : Signal processing unit 50 : Distance measuring unit 100 : Electron beam magnitude measuring device. |
