发明名称 |
BOOSTING VOLTAGE TECHNIQUE FPR PROGRAMMING NAND FLASH MEMORY DEVICES |
摘要 |
A floating gate memory array includes row control circuits that provide a programming voltage to a selected word line and provide a stair-like pattern of boosting voltages to unselected word lines. Boosting voltages descend with increased distance from the selected word line. Boosting voltages are increased in small increments up to their final values. |
申请公布号 |
WO2007130832(A3) |
申请公布日期 |
2008.01.03 |
申请号 |
WO2007US67429 |
申请日期 |
2007.04.25 |
申请人 |
SANDISK CORPORATION;HIGASHITANI, MASAAKI |
发明人 |
HIGASHITANI, MASAAKI |
分类号 |
G11C16/04;G11C8/08;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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