MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AND METHOD THEREFOR
摘要
A method for making a semiconductor device (10) is provided. The method includes forming a first transistor (94) with a vertical active region (56) and a horizontal active region (54) extending on both sides of the vertical active region (56). The method further includes forming a second transistor (96) with a vertical active region (58). The method further includes forming a third transistor (98) with a vertical active region (60) and a horizontal active region (54) extending on only one side of the vertical active region (60).
申请公布号
WO2007050288(A3)
申请公布日期
2008.01.03
申请号
WO2006US39651
申请日期
2006.10.10
申请人
FREESCALE SEMICONDUCTOR INC.;MIN, BYOUNG W.;BURNETT, JAMES D.;MATHEW, LEO