| 摘要 |
A plasma CVD(chemical vapor deposition) apparatus is provided to determine the state of a vacuum chamber and to reduce loss when the inside of the vacuum chamber fluctuates by monitoring the variation of resistance of a ground plate in performing a deposition process on a substrate. A space in which a thin film is deposited on a substrate(170) is formed in a vacuum chamber(100). A matching box(110) supplies power to an electrode formed in the vacuum chamber. The power supplied to the electrode is circulated by a ground part(160). A check part(200) checks the variation of the circulated power and the fluctuation of the resistance value of the ground part in depositing a thin film on the substrate and determines and displays the state of the vacuum chamber. The check part includes a conversion part for converting the power supplied by the matching box and a display part for checking and displaying the power converted by the conversion part.
|
