| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent surface defects of an interlayer dielectric and to restrain electrical short between metal lines by forming a protrusion part of the interlayer dielectric having wide surface. A semiconductor substrate(200) defined with a cell region(C) and a peripheral region(P) is prepared. A cylindrical capacitor(260) is formed on the cell region. An interlayer dielectric(270) is formed on the resultant structure. The interlayer dielectric of exposed cell region is partially etched by using a mask pattern for covering the peripheral region. At this time, a protrusion part is generated between an adjacent cell region and the peripheral region. By polishing the protrusion part using CMP(Chemical Mechanical Polishing), the interlayer dielectric is then planarized. Further, the mask pattern is formed in order to shield the 2-10mum.
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