| 摘要 |
<p>A method of fabricating a semiconductor device is provided to ensure a junction area between a floating gate and a control gate by forming a recessed portion on an upper surface of the floating gate. Portions of a tunnel oxide layer(20) and a polysilicon layer(30) are removed from a semiconductor substrate(10) to form an isolation layer(50a) protruding from the substrate. A substrate having the same physical property as the isolation layer is formed on the entire surface, and then is etched to form a space on a protruded sidewall of the isolation layer. A portion of the polysilicon layer is etched to form a recessed portion on the polysilicon layer. The protruding portion of the isolation layer and the spacer are removed, and then a dielectric layer(60) and a control gate are formed on the entire surface.</p> |
