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发明名称
Verfahren zur Herstellung eines BiCMOS-Bauelements, umfassend ein erstes bipolares Bauelement und ein zweites bipolares Bauelement desselben Dotierungstyps
摘要
申请公布号
DE102006004796(B4)
申请公布日期
2008.01.03
申请号
DE200610004796
申请日期
2006.02.02
申请人
TEXAS INSTRUMENTS DEUTSCHLAND GMBH
发明人
BALSTER, SCOTT;YASUDA, HIROSHI;EL-KAREH, BADIH
分类号
H01L21/822;H01L21/8249
主分类号
H01L21/822
代理机构
代理人
主权项
地址
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