发明名称 SCAN PATTERN FOR AN ION IMPLANTER
摘要 An ion implanter includes an ion beam generator configured to generate an ion beam and direct the ion beam towards a workpiece, wherein relative motion between the ion beam and the workpiece produces a scan pattern on a front surface of said workpiece. The scan pattern has an oscillating pattern on at least a portion of said front surface of said workpiece.
申请公布号 WO2008002403(A2) 申请公布日期 2008.01.03
申请号 WO2007US14008 申请日期 2007.06.14
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;DZENGELESKI, JOSEPH, P. 发明人 DZENGELESKI, JOSEPH, P.
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