SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, REWRITABLE LOGICAL INTEGRATED CIRCUIT, AND MEMORY ELEMENT

摘要

Typically provided is a switching element comprising a first insulating layer (1003) having an opening and made of a material for preventing the diffusion of metal ions, a first electrode (104) formed in the opening and containing a material capable of supplying the metal ions, an ion conducting layer (105) disposed to contact the upper face of the first electrode (104) and capable of conducting the metal ions, and a second electrode (106) disposed to contact with the upper face of the ion conducting layer (105) and made of a material incapable of supplying the metal ions. The switching element is constituted such that its conducting state between the first electrode (104) and the second electrode (106) is controlled by applying a voltage between the first electrode (104) and the second electrode (106).