METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NAND TYPE FLASH MEMORY DEVICE USING THE SAME

摘要

A method for manufacturing a semiconductor device and a method for manufacturing a NAND type flash memory device using the same are provided to minimize the area of a diffusion protection layer by forming the diffusion protection layer in a lower portion of a metal line. A first interlayer dielectric(39) with a contact plug is formed on a substrate(30). Diffusion protection layer materials are deposited on the first interlayer dielectric. Metal line materials are deposited on the diffusion protection layer materials. By etching the diffusion protection layer materials and metal line materials, metal lines(47) overlapped with the contact plug are formed. By oxidizing the surface of the metal lines, a protecting layer is formed on the surface of the metal lines. A second interlayer dielectric(41) is formed on a resultant structure so as to cover the metal lines.