SEMICONDUCTOR MEMORY DEVICE HAVING SINGLE-LEVEL CELLS AND MULTI-LEVEL CELLS AND DRIVING METHOD FOR THE SAME

摘要

A semiconductor memory device comprising a single-level cell and a multi-level cell and a driving method thereof are provided to prevent an operation error of the memory device or system operation error, by performing an error control operation according to an address and a command received from the outside. A memory cell array(160) includes a single-level cell region and a multi-level cell region. A command decoder(110) receives and decodes a command received from the outside. A region judgement part(120) receives an address from the outside, and judges the region where a memory cell corresponding to the address belongs among the single-level cell region and the multi-level cell region. A logic circuit(140) generates a control signal to drive the memory cell or to perform an error control operation, in response to the enable control signal.