INVERTER

摘要

An inverter is provided to improve a property of turn-on current and depletion by forming a stable D-inverter structure with organic semiconductor transistors. A driver transistor gate electrode(22) is formed on a plastic substrate(10). A first insulating layer(30) is formed to cover the driver transistor gate electrode. A driver transistor source electrode(42) is formed on the first insulating layer. A single layer(44) and a drain electrode of a load transistor (46) are used for forming a driver transistor drain electrode and a source electrode of the load transistor. Two organic semiconductor layers(72,74) are formed on the first insulating layer which is exposed between the source and drain electrodes. A second insulating layer(50) is formed to cover the source and drain electrodes and the organic semiconductor layers. A top gate electrode of the load transistor (62) is formed on the second insulating layer.