SILICON SINGLE CRYSTAL MANUFACTURING SYSTEM AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD USING THE SYSTEM

摘要

A system is provided for designing manufacturing conditions for controlling an F/G value within a prescribed range to have the crystal quality of a silicon single crystal manufactured by a pulling apparatus employing the CZ method to be within a target standard. The silicon single crystal manufacturing system is provided with at least a means (1) for automatically designing manufacturing conditions of the silicon single crystal of a subsequent batch temporarily, based on the crystal quality results of the silicon single crystal of the previous batch; a means (2) for calculating a correction quantity from the change quantity of a value F and/or G brought by the constitution member of the pulling apparatus for the subsequent batch; a means (3) for calculating a correction quantity from the change quantity of a value F and/or G brought by the manufacturing step of the subsequent batch; and a means (4) for calculating manufacturing conditions of the subsequent batch by adding the correction quantity obtained from the means (2) and/or the means (3) to the manufacturing conditions obtained from the means (1). Thus, the silicon single crystal having desired crystal qualities can be surely obtained, and the silicon single crystal manufacturing system with improved productivity and yield and the silicon single crystal manufacturing method using such system are provided.