| 摘要 |
<p>A method for manufacturing a photo mask is provided to suppress defects by removing SO4 ions and NH4 ions as sources of foreign materials having a growing characteristic. A patterning process is performed to form a light shielding layer pattern by patterning a photo mask(210). A cleaning process is performed to clean the photo mask by using H2SO4 and NH3(230). A plasma treatment process is performed to process the cleaned photo mask by using plasma and a rinsing process is performed to rinse the photo mask by using hot deionized water(310). The plasma treatment process is performed by using oxygen. A defect inspection process is performed to detect defects of the photo mask(320). The plasma treatment process and the rinsing process are performed repeatedly when the defect is detected from the photo mask.</p> |
