| 摘要 |
A method for forming a fuse box in a semiconductor device is provided to prevent fail of a fuse line by forming a polysilicon spacer at both sides of fuse lines, thereby preventing the oxidation of a TiN layer of the fuse line. A conductive pattern(32) is formed on a substrate(31) to connect with a power supply. A first interlayer dielectric(33) recessed between fuse line forming regions is formed on the resultant structure. A first and a second fuse lines(38,39) are formed on the both portions of the recessed first interlayer dielectric. A polysilicon spacer(40) is formed at both sides of the first and the second fuse lines. A second interlayer dielectric(41) is formed on the first interlayer dielectric including the polysilicon spacer. Further, the first and the second fuse lines are lamination layer of TiN layer and polysilicon layer.
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