HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS FOR SEMICONDUCTOR DEVICE MANUFACTURING

摘要

A high-density plasma chemical vapor deposition apparatus for manufacturing a semiconductor device is provided to improve a yield and reliability by forming a deposition layer having a uniform thickness on a wafer. A shower head(206a) is installed in an upper side within a reaction chamber(202) in order to face a wafer(w) loaded on a fixing chuck(204). A plurality of injection holes are formed on a bottom surface of the shower head. A gas supply unit(208) supplies a reaction gas to the shower head and supplies a cooling gas to the fixing chuck in order to cool the wafer. A coil ring(214) is installed between the shower head and the fixing chuck. The coil ring includes a ring-shaped body(214a) and a coil(214b) inserted into the ring-shaped body, in order to form plasma within through-holes or transfer the reaction gas through the through-holes. A power generator(210) is formed to apply low-frequency power to the coil of the coil ring.