发明名称 WRITE METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE USING THE SAME
摘要 A method for writing data in a non-volatile memory device and the non-volatile memory device using the same are provided to reduce a writing time by writing data of a first status at first and writing the data of a second status at later, and reduce more writing time by removing a division write session not generating a division write operation. A comparator(140) outputs a comparison signal representing the failed non-volatile memory cell having verification data different from the write data by comparing the verification data read from non-volatile memory cells with a plurality of write data to be written to the cells. A status flag signal generator(146) provides a status flag signal pointing the cells in which the write data of a predetermined status is written. A write verification pointer(150) provides a pointing signal pointing the division write sessions for writing the write data of the predetermined status to the failed cell by receiving the comparison and status flag signal. A write pulse generator(160) provides a set and reset pulse control signal according to timing of the pointed division write session by receiving the pointing signal. A write driver(170) provides a set or reset pulse by receiving the write data and the set/reset pulse control signal.
申请公布号 KR100791341(B1) 申请公布日期 2008.01.03
申请号 KR20060084865 申请日期 2006.09.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KWANG JIN;KWAK, CHOONG KEUN;KIM, DU EUNG
分类号 G06F12/00 主分类号 G06F12/00
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