发明名称 |
WRITE METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE USING THE SAME |
摘要 |
A method for writing data in a non-volatile memory device and the non-volatile memory device using the same are provided to reduce a writing time by writing data of a first status at first and writing the data of a second status at later, and reduce more writing time by removing a division write session not generating a division write operation. A comparator(140) outputs a comparison signal representing the failed non-volatile memory cell having verification data different from the write data by comparing the verification data read from non-volatile memory cells with a plurality of write data to be written to the cells. A status flag signal generator(146) provides a status flag signal pointing the cells in which the write data of a predetermined status is written. A write verification pointer(150) provides a pointing signal pointing the division write sessions for writing the write data of the predetermined status to the failed cell by receiving the comparison and status flag signal. A write pulse generator(160) provides a set and reset pulse control signal according to timing of the pointed division write session by receiving the pointing signal. A write driver(170) provides a set or reset pulse by receiving the write data and the set/reset pulse control signal.
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申请公布号 |
KR100791341(B1) |
申请公布日期 |
2008.01.03 |
申请号 |
KR20060084865 |
申请日期 |
2006.09.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, KWANG JIN;KWAK, CHOONG KEUN;KIM, DU EUNG |
分类号 |
G06F12/00 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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