SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is provided to prevent contact pads from being damaged by a subsequent wet etch process by forming a contact pad protection layer on contact pads. A contact pad is formed in a first interlayer dielectric(110') on a semiconductor substrate(100). A contact pad protection layer pattern covers the circumference of the surface of the contact pad. A conductive line is positioned on the second interlayer dielectric covering the contact pad protection layer pattern, selectively connected to the contact pad. An extension contact hole is formed in the second interlayer dielectric between the conductive lines, exposing a contact pad not connected to the conductive line. A contact spacer is formed on the inner wall of the extension contact hole, positioned on the contact pad protection layer pattern. An extension contact plug is filled in the extension contact hole having the contact spacer on its inner wall. The conductive line can be selectively connected to the contact pad by a contact plug. The contact pad protection layer pattern can surround the lower part of the contact plug.