发明名称 |
Method for forming a capacitor structure and a capacitor structure |
摘要 |
A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.
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申请公布号 |
US2008003740(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20060477581 |
申请日期 |
2006.06.29 |
申请人 |
WUNNICKE ODO;MOLL PETER;SCHUPKE KRISTIN |
发明人 |
WUNNICKE ODO;MOLL PETER;SCHUPKE KRISTIN |
分类号 |
H01L21/8244 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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