发明名称 |
METHOD OF FORMING A TRANSISTOR HAVING GATE PROTECTION AND TRANSISTOR FORMED ACCORDING TO THE METHOD |
摘要 |
<p>A microelectronic device and a method of forming same. The method comprises: a transistor gate; a first spacer and a second spacer respectively adjacent a first side and a second side of the gate; a diffusion layer supra-adjacent the gate; contact regions super-adjacent the diffusion layer and adjacent the first spacer and the second spacer; a protective cap super-adjacent the gate and between the contact regions, the protective cap being adapted to protect the device from shorts between the gate and the contact regions.</p> |
申请公布号 |
WO2008002947(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
WO2007US72167 |
申请日期 |
2007.06.26 |
申请人 |
INTEL CORPORATION;CHANGE, PETER, L., D. |
发明人 |
CHANGE, PETER, L., D. |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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