发明名称 ION IMPLANTING APPARATUS AND ION BEAM DEFLECTION ANGLE CORRECTING METHOD
摘要 <p>An ion implantation apparatus in which the divergence in the Y-direction due to the space charge effect of the ion beam is compensated between the target and the ion beam deflector where the ion beam is separated from neutral particles and thereby the ion beam transportation efficiency is enhanced. The ion implantation apparatus comprises a beam parallizer (14) for converting an ion beam (4) scanned in the X-direction is bent back into a parallel ion beam by a magnetic field and outputting an ion beam (4) having a ribbon shape. The beam parallizer (14) also serves as an ion beam deflector for separating the ion beam (4) and neutral particles by the deflection of the ion beam (4) by the magnetic filed. Near the exit of the beam parallizer (14), electrodes are so disposed as to be opposed to each other in the Y-direction, with the space where the ion beam (4) passes interposed. Thus, an electrostatic lens (30) for converging the ion beam (4) in the Y-direction is provided.</p>
申请公布号 WO2008001685(A1) 申请公布日期 2008.01.03
申请号 WO2007JP62578 申请日期 2007.06.22
申请人 NISSIN ION EQUIPMENT CO., LTD.;YAMASHITA, TAKATOSHI 发明人 YAMASHITA, TAKATOSHI
分类号 H01J37/317;H01J37/12;H01L21/265 主分类号 H01J37/317
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