| 摘要 |
A circuit for detecting defect of a semiconductor memory device is provided to detect the defect of a dummy word line in a test mode by supplying a ground voltage and a bit line precharge voltage to the dummy word line selectively. A number of dummy word lines are comprised in one side of a number of word lines. A test part(30) applies a ground voltage to the dummy word lines in a standby and normal mode, and tests the defect of the dummy word lines by applying the ground voltage and a bit line precharge voltage to the dummy word lines selectively in a test mode. A sense amplifier driver(20) supplies the bit line precharge voltage to the test part.
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