| 摘要 |
The present invention relates to methods of preparing poly crystal line thin films of semiconductors for radiation detectors and solar cells and the films resulting therefrom. In one aspect, the present invention provides a first type of particles and a second type of particles, wherein the first type of particles have a Cu/(In+Ga) molar ratio of at least 1.38. In another aspect the present invention provides a first type of particles containing a Cu-Group HIA alloy wherein a molar ratio of Cu to Group IIIA material within each of the particles is at least 1.38.
|
