发明名称 |
Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method |
摘要 |
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
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申请公布号 |
US2008001151(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20060646241 |
申请日期 |
2006.12.28 |
申请人 |
JUN WOONG GI;CHAE GEE SUNG;HEO JAE SCOK |
发明人 |
JUN WOONG GI;CHAE GEE SUNG;HEO JAE SCOK |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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