发明名称 Method for fabricating contact plug in semiconductor device
摘要 An insulation layer including a landing plug is formed over a substrate. An amorphous carbon hard mask is formed over a certain portion of the insulation layer. The insulation layer is etched using the amorphous carbon hard mask to form a storage node contact hole exposing the landing plug. A conductive material is formed in the storage node contact hole to form a storage node contact plug. Other embodiments are also described.
申请公布号 US2008003798(A1) 申请公布日期 2008.01.03
申请号 US20060646062 申请日期 2006.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG CHANG-YOUN
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
主权项
地址