发明名称 |
Field effect transistor, integrated circuit element, and method for manufacturing the same |
摘要 |
A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region.
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申请公布号 |
US2008001171(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070725469 |
申请日期 |
2007.03.20 |
申请人 |
TEZUKA TSUTOMU;IRISAWA TOSHIFUMI |
发明人 |
TEZUKA TSUTOMU;IRISAWA TOSHIFUMI |
分类号 |
H01L29/78;H01L21/336;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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