| 摘要 |
A non-planar semiconductor device ( 10 ) starts with a silicon fin ( 42 ). A source of germanium (e.g. 24, 26, 28, 30, 32 ) is provided to the fin ( 42 ). Some embodiments may use deposition to provide germanium; some embodiments may use ion implantation ( 30 ) to provide germanium; other methods may also be used to provide germanium. The fin ( 42 ) is then oxidized to form a silicon germanium channel region in the fin ( 36 ). In some embodiments, the entire fin ( 42 ) is transformed from silicon to silicon germanium. One or more fins ( 36 ) may be used to form a non-planar semiconductor device, such as, for example, a FINFET, MIGFET, Tri-gate transistor, or multi-gate transistor.
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