发明名称 |
METHOD OF DEPOSITING CHALCOGENIDE FILM FOR PHASE-CHANGE MEMORY |
摘要 |
<p>Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.</p> |
申请公布号 |
WO2008002017(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
WO2007KR02425 |
申请日期 |
2007.05.18 |
申请人 |
IPS LTD.;JUNG, YU-MIN;LEE, KI-HOON |
发明人 |
JUNG, YU-MIN;LEE, KI-HOON |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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