| 摘要 |
A method of fabricating a semiconductor device is provided to prevent fuse fail by forming an etching stop layer on a dielectric layer formed on an upper portion of a metal fuse. A metal fuse and a first wire are formed on a semiconductor substrate. A first interlayer dielectric, an etching stop layer(135), a second interlayer dielectric(121) and a third interlayer dielectric layer(127) are sequentially formed on the metal fuse and the first metallization, and then are etched to form a contact plug for second wire. A second metallization(143) which is connected to the contact plug is formed on the third interlayer dielectric layer, and then a passivation(145) is formed on the second metallization. A fuse open region(147) for exposing the first interlayer dielectric is formed, and a pad open region(149) for exposing the second metallization is formed.
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