Magnetic RAM cell, has reference layer structure placed bi-directional and parallel to axis by magnetic field, which is put on during write operation, so that information in reference layer structure is stored

摘要

The cell (200) has a reference layer structure (204) with an antiferromagnetic layer structure for setting a magnetic adjustment of the reference layer structure. The reference layer structure exhibits a higher magnetic coercive force and is magnetically polarizable. The reference layer structure is placed bi-directional and parallel to an axis by a magnetic field, which is put on during a write operation, so that information in the reference layer structure is stored during heating of an antiferromagnetic layer structure over its blocking temperature. An independent claim is also included for a method for operation of a magnetic RAM cell.