| 摘要 |
A substrate processing method is provided to remove a nitride layer selectively by contacting plasma including oxygen with a substrate having a thermal oxide layer and a nitride layer formed by a thermal oxide process and by supplying HF(hydrofluoric) gas toward the substrate. Plasma including oxygen contacts with a substrate having a thermal oxide layer(51) and a nitride layer(52) that are formed by a thermal oxide treatment, wherein active species(53) in the plasma including oxygen transfer in almost parallel with the lateral surface of the conductive part to contact with the nitride layer. The HF gas is supplied toward the substrate with which the plasma including oxygen contacts. The substrate has a conductive part of a convex type protruding from the thermal oxide layer, and the nitride layer covers the lateral and top surfaces of the conductive part.
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