SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to reduce current consumption efficiently in generating a signal to enable a data input buffer at expected timing. A data input circuit receives data from the outside in response to an enable signal. An enable signal generation part generates the enable signal in response to a first control signal enabled during expected period when the data is inputted. The enable signal generation part comprises a signal input part(100), a signal transfer part(200) and a signal output part(300). The signal input part outputs a first internal enable signal using the first control signal and a second control signal enabled in response to a write command. The signal transfer part buffers the internal enable signal. The signal output part latches the buffered internal enable signal and outputs the latched internal enable signal as the enable signal.