发明名称 INTERNAL READ SIGNAL GENERATOR AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME
摘要 An internal read signal generator and a semiconductor memory device comprising the same are provided to assure setup/hold time of an input signal under high frequency environment. A first delay unit(203) delays a clock signal to assure margin of setup/hold time of an input signal. A transfer unit transfers the input signal by being synchronized with an output clock of the first delay unit. A second delay unit(204) delays an output signal of the transfer unit. An output part(205) assembles the input signal and an output signal of the second delay unit. The delay amount of the second delay unit enables a rising edge of the output signal at the output part to have a period of the clock signal.
申请公布号 KR20080001123(A) 申请公布日期 2008.01.03
申请号 KR20060059253 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, SANG SIC
分类号 G11C8/04;G11C8/18 主分类号 G11C8/04
代理机构 代理人
主权项
地址