发明名称 |
Hermetic Passivation Layer Structure for Capacitors with Perovskite or Pyrochlore Phase Dielectrics |
摘要 |
A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
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申请公布号 |
US2008001292(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
US20070767559 |
申请日期 |
2007.06.25 |
申请人 |
ZELNER MARINA;WOO PAUL BUN CHEUK;CERVIN-LAWRY ANDREW;NAGY SUSAN C;CAPANU MIROEA |
发明人 |
ZELNER MARINA;WOO PAUL BUN CHEUK;CERVIN-LAWRY ANDREW;NAGY SUSAN C.;CAPANU MIROEA |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
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