| 摘要 |
A semiconductor memory has a stacked bank structure and includes a data input/output pad; a global input/output line connected to the data input/output pad; and a plurality of banks connected to the global input/output line. Each bank is stacked on another one of the banks and shares a local input/output line corresponding to the global input/output line and a column select signal line to which a column select signal is applied. Accordingly, by providing a bank structure in which different banks are stacked, the number of global input/output lines, local input/output lines and write drivers (or input/output sense amps) are reduced.
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