发明名称 Method for fabricating semiconductor device
摘要 An insulation layer over a substrate is etched to form a contact hole. A conductive layer is formed over the resultant structure. The conductive layer is etched right before the patterned insulation layer is exposed. The conductive layer is etched again such that the patterned insulation layer is exposed to thereby form a contact plug filling the contact hole.
申请公布号 US2008003821(A1) 申请公布日期 2008.01.03
申请号 US20070716331 申请日期 2007.03.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 NAM KI-WON;AHN HYUN
分类号 H01L21/441 主分类号 H01L21/441
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