| 摘要 |
A TFT, a method for manufacturing the TFT, and a method for manufacturing an LCD using the same are provided to form a channel layer and ohmic contact layers simultaneously using liquid silicon and a half-tone mask, thereby simplifying the manufacturing process. A gate electrode(101) is formed on a substrate(100). A gate insulating layer(102) is formed on the entire surface of the substrate including the gate electrode. A source electrode(103a) and a drain electrode(103b) are formed on the gate insulating layer. A liquid type silicon film and a conductive film are formed on the resultant substrate. A channel pattern and ohmic patterns are formed in a channel region corresponding to the gate electrode by performing a mask process on the conductive film. A channel layer(106a) and ohmic contact layers(106b) are formed on the resultant substrate by performing an annealing process and an ohmic contact process on the substrate including the channel pattern and the ohmic patterns. |
