| 摘要 |
A method of fabricating a semiconductor device is provided to structurally increase a surface area of a storage electrode by forming a recessed structure on a sidewall of a storage electrode region and then forming the storage electrode. An etching stop layer(125), a first sacrificial layer(130), a second sacrificial layer(133) and a hard mask layer are formed on a semiconductor substrate(110). The hard mask layer is exposed by using a storage electrode mask to form a photoresist pattern. The hard mask layer, the second and first sacrificial layers and the etching stop layer are etched by using the photoresist pattern to form a storage electrode region. The storage electrode region is etched through wet etching to form a recessed structure. A conductive layer for lower storage electrode planarized to separate the lower storage electrode. After a dielectric layer(155) s formed on the lower storage electrode, a plate electrode(160) is formed on the entire surface to bury the storage electrode region.
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