| 发明名称 |
METHOD FOR PLANARIZING THIN LAYER OF SEMICONDUCTOR DEVICE |
| 摘要 |
A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely proportional to a thickness distribution of the HDP oxide layer. A chemical mechanical polishing process is performed on the HDP oxide layer.
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| 申请公布号 |
US2008003828(A1) |
申请公布日期 |
2008.01.03 |
| 申请号 |
US20060618669 |
申请日期 |
2006.12.29 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI JAE GON |
| 分类号 |
H01L21/461;B24B37/013;H01L21/304;H01L21/316;H01L21/321;H01L21/768 |
主分类号 |
H01L21/461 |
| 代理机构 |
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| 主权项 |
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