| 摘要 |
A method of forming a gate of a flash memory device, including the steps of forming a gate on a semiconductor substrate and forming an oxide layer on the entire surface of the gate, forming a nitride layer on a sidewall of the oxide layer in a spacer form, performing a polishing process so that a top surface of the gate is exposed, and then stripping the nitride layer to form an opening, forming a barrier metal layer on a sidewall of the opening, and forming a tungsten layer in the opening.
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